Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer
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چکیده
منابع مشابه
Nitrogen-Polar (0001¯) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the Ga...
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Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1~LO! phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2018
ISSN: 0957-4484,1361-6528
DOI: 10.1088/1361-6528/aae76b